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Ion beam lithography for Fresnel zone plates in X-ray microscopy

机译:用于X射线显微镜中菲涅耳波带片的离子束光刻

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摘要

Fresnel Zone Plates (FZP) are to date very successful focusing optics forX-rays. Established methods of fabrication are rather complex and based onelectron beam lithography (EBL). Here, we show that ion beam lithography (IBL)may advantageously simplify their preparation. A FZP operable from the extremeUV to the limit of the hard X-ray was prepared and tested from 450 eV to 1500eV. The trapezoidal profile of the FZP favorably activates its 2nd order focus.The FZP with an outermost zone width of 100 nm allows the visualization offeatures down to 61, 31 and 21 nm in the 1st, 2nd and 3rd order focusrespectively. Measured efficiencies in the 1st and 2nd order of diffractionreach the theoretical predictions.
机译:迄今为止,菲涅耳波带片(FZP)是非常成功的X射线聚焦光学器件。建立的制造方法相当复杂,并且基于电子束光刻(EBL)。在这里,我们表明离子束光刻(IBL)可以有利地简化其制备。制备了可在极限UV至硬X射线极限范围内操作的FZP,并在450 eV至1500eV范围内进行了测试。 FZP的梯形轮廓可以很好地激活其二阶聚焦。最外层区域宽度为100 nm的FZP可以分别观察到在一阶,二阶和三阶聚焦中低至61、31和21 nm的特征。一级和二级衍射的实测效率达到理论预测值。

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